PLASMA PROCESSING APPARATUS AND METHOD FOR MEASURING PLASMA VARIABLE USING THE SAME

摘要

The present invention relates to a plasma processing apparatus and a method for measuring a plasma variable using the same. The plasma processing apparatus comprises: a chamber; a sine wave applying unit applying sine wave signals to plasma formed inside the chamber; a AC power supply unit configured to generates and supplies the sine wave signals to the sine wave applying unit; a magnetic bias generating unit configured to connected between the sine wave applying unit and the AC power supply unit; and a variable calculating unit configured to measure a plasma variable using the magnetic bias generating unit, wherein the sine wave signals may include a first sine wave signal and a second sine wave signal the frequencies of which are different from each other. According to the present invention, even if signals applied to plasma to measure plasma variables are two, and if the frequency of a signal is a harmonic being an integer multiple of the frequency of the other signal, it is possible to measure or analyze an electron temperature among the plasma variables.