| 摘要 |
<p>A photomask having a transfer pattern and used for manufacturing a display device, wherein: the transfer pattern includes a main pattern including a light transmitting part and having a diameter of 4μm or smaller, and an auxiliary pattern disposed around the main pattern and including a light transmitting part having a width that is not resolved through light exposure; there is substantially no phase difference between exposure light passing through the main pattern and exposure light passing through the auxiliary pattern; and a pitch P (μm) that is a distance between the center of the main pattern and the center of the width of the auxiliary pattern is set such that±1st-order diffraction beams, generated by light interference caused by both the exposure light passing through the main pattern and the exposure light passing through the auxiliary pattern, are incident to an optical system of a light exposure device used for the light exposure.</p> |
