The present invention relates to a method for forming a through silicon via. A through silicon via can be simply manufactured by using a conventional trench insulating process. Electrical insulation between the through silicon via and silicon can be effectively achieved.
申请公布号
KR101459597(B1)
申请公布日期
2014.11.10
申请号
KR20130049781
申请日期
2013.05.03
申请人
SILICONFILE TECHNOLOGIES INC.
发明人
AHN, HEUI GYUN;AHN, SANG WOOK;LEE, YONG WOON;JUNG, HUY CHAN;LEE, DO YOUNG
