DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

The present invention aims to provide a display device having a thin film transistor with excellent electrical properties and high reliability, and a method to provide the same device in a high mass production yield. The display device has the thin film transistor in a channel-stop-type inverse-staggered thin film transistor, and has a microcrystal semiconductor film including a channel forming area. In the channel forming area of the microcrystal semiconductor film, an impurity area selectively including a first conductive impurity element is formed on an area where a source electrode and a drain electrode are not overlapped by each other.