HARD MASK STRUCTURE AND METHOD OF FORMING FINE PATTERNS FOR SEMICONDUCTOR DEVICE USING THE SAME

摘要

The present technique provides a hard mask structure for forming a fine pattern and a method of forming fine patterns for a semiconductor device using the same. A method of manufacturing a semiconductor device according to the present technique includes: a step of forming multiple first hard mask patterns which are separated by multiple trenches on an etching object layer; a step of forming multiple second hard mask patterns which gapfill the trench; a step of forming a first sacrificial pattern extended in a direction intersecting with the first and the second hard mask patterns on the first and the second hard mask patterns; a step of forming multiple first open parts by etching the second hard mask pattern by using the first sacrificial pattern and the first hard mask pattern as an etch mask; a step of forming a second sacrificial pattern which is filled between the first open part and the first sacrificial pattern; a step of forming a second opening part by etching the first sacrificial pattern and the first hard mask pattern by using the second sacrificial pattern and the second hard mask pattern as an etch mask; a step of removing the second sacrificial pattern; and a step of forming multiple hole patterns by etching the etching object layer under the first open part and the second open part.