| 摘要 |
<p>A light emitting cell and manufacturing method thereof are provided to improve the mass producibility by electrically separating from each emitting device cell. The mask layer(210) having the pattern defining the compartment region of the unit emitting device cell is formed on the top of the insulating substrate(200). The emitting device cell(300) having the light emitting diode structure of the gallium nitride group semiconductor is formed on the top of the substrate including the mask layer. The emitting device cell is formed on the low temperature buffer layer. The contact part for the electrical contact of the emitting device cell is formed. The second conductivity semiconductor layer of the emitting device cell is exposed by the contact part.</p> |
