| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a device capable of drawing for suppressing the dimensional fluctuation of a pattern due to resist heating while suppressing the correction residual of a proximity effect even during multiple lithograph.SOLUTION: The device comprises: an exposure dose arithmetic unit for virtually dividing the drawing region of a sample into TFs in a first mesh size, virtually dividing the same into adjacent mesh regions in a second mesh size equal to the mesh size of the TF divided by the number of passes in multiple lithography and further divided by a natural number, and then calculating an exposure dose by using an exposure dose model using an exposure does threshold; a typical temperature arithmetic unit for calculating, for each pass in multiple lithography and for each TF, a typical temperature of the TF rising due to heat transmission caused by irradiation with an electron beam; a polynomial arithmetic unit for performing an arithmetic operation on a polynomial expression having, in its element, a term multiplied by an exposure dose factor based on the typical temperature of each pass and a pattern area density per adjacent mesh region; and a drawing unit for drawing a pattern on a sample by using a charged particle beam with an exposure dose in which a difference between the value derived by arithmetic operation on the polynomial expression and the exposure dose threshold is within a permissible range of values.</p> |
