| 发明名称 |
COPPER INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A copper interconnect structure in a semiconductor device comprises a dielectric layer having sidewalls and a surface defining an opening in the dielectric layer. The copper interconnect structure also comprises a barrier layer deposited on the sidewalls and the surface of the dielectric layer defining the opening. The copper interconnect structure further comprises a barrier/seed mixed layer deposited on the barrier layer. The copper interconnect structure additionally comprises an adhesive layer deposited on the barrier/seed mixed layer. The copper interconnect structure also comprises a seed layer deposited on the adhesive layer. |
| 申请公布号 |
US2014327141(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201414332866 |
申请日期 |
2014.07.16 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU Chen-Hua;SHUE Shau-Lin;LEE Hsiang-Huan;YEH Ching-Fu |
| 分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A copper interconnect structure in a semiconductor device, comprising:
a dielectric layer having sidewalls and a surface defining an opening in the dielectric layer; a barrier layer deposited on the sidewalls and the surface of the dielectric layer defining the opening; a barrier/seed mixed layer deposited on the barrier layer; an adhesive layer deposited on the barrier/seed mixed layer; and a seed layer deposited on the adhesive layer. |
| 地址 |
Hsinchu TW |
