Semiconductor Device and Method for Forming Same

摘要

A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a dielectric layer filling the remainder of the U-shape. The resistor may be integrated with a dual metal gate manufacturing process or may be integrated with multiple types of resistors.

主权项

1. A semiconductor device comprising:
a first resistor on a substrate, the first resistor comprising:
a U-shaped first metal layer comprising a first metal;a U-shaped second metal layer adjacent to the first metal layer, the second metal layer comprising a second metal; a dielectric material located within the second metal layer; a U-shaped dielectric layer located adjacent to the first metal layer; a first active device on the substrate, the first active device comprising a first gate electrode, the first gate electrode comprising the first metal and the second metal; and a second active device on the substrate, the second active device comprising a second gate electrode, the second gate electrode being free from the first metal and the second metal, wherein the first active device, the second active device, and the first resistor each have a top surface that is planar to each other.