Semiconductor Sensor Structures with Reduced Dislocation Defect Densities and Related Methods for the Same

摘要

Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.

主权项

1. A circuit structure comprising:
a transistor disposed in a substrate, the substrate comprising a first crystalline semiconductor material, the transistor comprising a first source/drain region disposed in the first crystalline semiconductor material and a gate structure disposed on the first crystalline semiconductor material; and a photo-sensor disposed in a second crystalline semiconductor material, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, the second crystalline semiconductor material being disposed at least partially in a recess of the first crystalline semiconductor material, the photo-sensor being electrically coupled to the gate structure of the transistor.