SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.

主权项

1. A semiconductor device comprising:
a gate electrode layer provided over an insulating surface; a gate insulating film provided over the gate electrode layer; an island-shaped oxide semiconductor film provided over the gate insulating film; and a source electrode layer and a drain electrode layer which are provided in contact with the island-shaped oxide semiconductor film, wherein the source electrode layer covers one of end portions of the island-shaped oxide semiconductor film in a channel width direction, wherein the drain electrode layer covers the other of the end portions of the island-shaped oxide semiconductor film in the channel width direction, and wherein a surface of the island-shaped oxide semiconductor film has a chlorine concentration lower than or equal to 5×1018 atoms/cm3.