Semiconductor Device with an Electrode Buried in a Cavity

摘要

A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.

主权项

1. A semiconductor device, comprising:
an active device region formed in an epitaxial layer disposed on a semiconductor substrate; and a buried electrode disposed below the active device region in a cavity formed within the semiconductor substrate, the buried electrode comprising an electrically conductive material different than the material of the semiconductor substrate.