发明名称 |
A NOVEL IR IMAGE SENSOR USING A SOLUTION PROCESSED PBS PHOTODETECTOR |
摘要 |
An image sensor is constructed on a substrate that is a read-out transistor array with a multilayer array of infrared photodetectors formed thereon. The infrared photodetectors include a multiplicity of layers including an infrared transparent electrode distal to the substrate, a counter electrode directly contacting the substrate, and an infrared sensitizing layer that comprises a multiplicity of nanoparticles. The layers can be inorganic or organic materials. In addition to the electrodes and sensitizing layers, the multilayer stack can include a hole-blocking layer, an electron-blocking layer, and an anti-reflective layer. The infrared sensitizing layer can be PbS or PbSe quantum dots. |
申请公布号 |
WO2014178923(A2) |
申请公布日期 |
2014.11.06 |
申请号 |
WO2014US12722 |
申请日期 |
2014.01.23 |
申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. |
发明人 |
KIM, DO, YOUNG;SO, FRANKY;LEE, JAE, WOONG |
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