发明名称 CHARGE PUMP CAPACITOR ASSEMBLY WITH SILICON ETCHING
摘要 <p>A charge pump capacitor assembly (190) includes a charge pump capacitor (190) and a silicon substrate (198). The charge pump capacitor includes: a silicon-based charge pump capacitor dielectic layer (205), a first terminal (201) on a first side and a second terminal (203) on a second side of the silicon-based charge pump capacitor dielectric layer opposite the first side, and a field oxide layer (207) adjacent the second terminal. The charge pump capacitor is coupled to the silicon substrate. The silicon substrate is etched to reduce contact between the silicon substrate and the field oxide layer under the capacitor.</p>
申请公布号 WO2014179462(A1) 申请公布日期 2014.11.06
申请号 WO2014US36171 申请日期 2014.04.30
申请人 ROBERT BOSCH GMBH;MUZA, JOHN M. 发明人 MUZA, JOHN M.
分类号 H01L27/02;H01L27/08;H01L49/02;H02M3/07 主分类号 H01L27/02
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