| 摘要 |
<p>Disclosed is a method for fabricating a MOS controlled rectifier. The method includes the steps of: forming a guard ring on a substrate by using a first mask; forming a window by etching a gate layer using a second mask after forming the gate layer on the substrate; forming a well and a first region, which is shallower than the well and has a type opposite to a type of the well, by sequentially injecting first and second ions to a region where the window of the substrate is formed; performing a self-align to form a second region by forming a spacer in the window, and injecting a third ion to form the second region, which has polarity opposite to polarity of the first region, on the first region, thereby separating the first region; and removing the spacer and forming a metal layer, which electrically connects the gate layer forming a gate to the first region forming the first region, by using a third mask.</p> |
