CLEANING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a technique to reduce time required for cleaning.SOLUTION: A method of cleaning inside a processing chamber after performing a process of forming an oxide film on a substrate by performing predetermined times a cycle which includes a process of supplying a material gas to a substrate inside the processing chamber composed of a reaction tube and a manifold for supporting the reaction tube through a first nozzle which is provided in the manifold and rises from the manifold to the inside of the reaction tube, and a process of supplying an oxidation gas to the substrate in the processing chamber through a second nozzle which is provided on the manifold and rises from the manifold to the inside of the reaction tube, comprises: a first cleaning process of supplying a hydrogen fluoride gas to the inside of the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas toward an internal wall surface of the manifold through a third nozzle provided on the manifold.