发明名称 |
RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND |
摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition capable of improving lithographic properties, a method of forming a resist pattern using the resist composition, and a compound useful as a resist composition.SOLUTION: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid includes a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a photo-decomposable quencher (D0) containing a compound represented by the general formula (d0) in the figure. In the formula, Rrepresents a hydrocarbon group with 4 to 20 carbon atoms which may have a substituent; Yrepresents a divalent linking group; Rand Reach independently represent a substituent with 0 to 20 carbon atoms other than a fluorine atom, where one of Rand Rmay form a ring with Y; Mrepresents an m-valent organic cation; and m represents an integer equal to or greater than 1. |
申请公布号 |
JP2014209167(A) |
申请公布日期 |
2014.11.06 |
申请号 |
JP20130197580 |
申请日期 |
2013.09.24 |
申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
KAWAKAMI AKINARI;KAIHO TAKAAKI;NAKAMURA TAKESHI |
分类号 |
G03F7/004;C07C309/04;C07C309/17;C07C381/12;C07D213/18;C07D307/00;C07D307/32;C07D327/04;C07D333/46;C07D333/54;C07D333/76;C07D335/02;C07D493/18;C07D497/18;G03F7/038;G03F7/039 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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