| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of producing an SiC single crystal which enables reduction of the dislocation density in a grown SiC single crystal and is based on sublimation.SOLUTION: A method of producing an SiC single crystal comprises establishing appropriate conditions for growth of an SiC single crystal 14 by the sublimation method, opening a valve 26 connected to a nitrogen gas raw material 28 for a specified time of 1 min to 1 h to introduce a specified amount of nitrogen 22 into a chamber 16 and allowing the nitrogen to penetrate graphite of a growth crucible 6 and be doped in the crystal interface of the growing crystal, closing the valve 26 and introducing an inert gas 22 to remove nitrogen remaining in the growth crucible 6 rapidly, with the series of operation repeated twice or more to generate perturbation. The sharp perturbation generated by the SiC single crystal growth step notably reduces the penetration dislocation density. Instead of the perturbation by nitrogen introduction, perturbation can be also generated by varying the pressure and/or the temperature in the growth crucible 6.</p> |
