| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photo-electrically converting device which widens a selection range of material of a layer including a quantum dot, for example.SOLUTION: A photo-electrically converting device comprises: a p-type monocrystal silicon layer 100; an n-type semiconductor layer 120; and a porous silicon layer 110 which is formed between the p-type monocrystal silicon layer 100 and the n-type semiconductor layer 120, and contains a plurality of quantum dots 112 in a hole 111.</p> |
