发明名称 METHOD FOR FORMING COMPLEX FILM OF DIAMOND-LIKE CARBON AND SILICON CARBIDE
摘要 A method for applying a resin-repellant coating to an injection molding component made of metal forms a complex film of diamond-like carbon (DLC) and silicon carbide (SiC) on the metal. A vacuum chamber is evacuated of air and an electric field is created in the chamber. A first gas containing carbon and a second gas containing silicon interact with an ionized noble gas as a working gas in the chamber. A first film of SiC is deposited and bonded on the metal die, a second film of DLC from excess carbon atoms is then deposited and bonded on the first film to form the complex film.
申请公布号 US2014329031(A1) 申请公布日期 2014.11.06
申请号 US201314014423 申请日期 2013.08.30
申请人 HON HAI PRECISION INDUSTRY CO., LTD. 发明人 HSU CHIA-LING
分类号 B29C33/58 主分类号 B29C33/58
代理机构 代理人
主权项 1. A method for forming a complex film of diamond like carbon and silicon carbide, comprising: vacuuming a chamber, the chamber receiving a power supply; applying a first gas containing carbon element, a second gas containing silicon element, and a working gas into the chamber; and turning the power supply on to generate an electric field in the chamber, the electric field making the working gas to move in a high speed and making the working gas strike the first gas and the second gas, such that the first gas and the second gas are ionized to generate carbon ions and silicon ions, the carbon ions chemically reacting with the silicon ions to obtain a complex film of diamond-like carbon and silicon carbide.
地址 New Taipei TW