发明名称 |
Immunity of Phase Change Material to Disturb in the Amorphous Phase |
摘要 |
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. |
申请公布号 |
US2014328121(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201414336600 |
申请日期 |
2014.07.21 |
申请人 |
Ovonyx, Inc. |
发明人 |
Gordon George A.;Savransky Semyon D.;Parkinson Ward D.;Kostylev Sergey;Reed James;Lowrey Tyler A.;Karpov Ilya V.;Spadini Gianpaolo |
分类号 |
G11C13/00;G11C29/04 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
reading a cell of a memory including a phase change memory element and an ovonic threshold switch using a refresh pulse followed by a read pulse to determine a threshold voltage of the cell to be read. |
地址 |
Sterling Heights MI US |