| 发明名称 |
MEMORY CELL SUPPLY VOLTAGE REDUCTION PRIOR TO WRITE CYCLE |
| 摘要 |
An integrated circuit device includes a memory cell coupled to a supply voltage line to receive a supply voltage and a voltage control circuit operable to reduce a magnitude of the supply voltage prior to a write cycle to the memory cell. The voltage control circuit includes a first capacitor that is selectively coupled between a supply voltage line and a first reference supply voltage line of the integrated circuit device in anticipation of a write cycle to the memory cell. |
| 申请公布号 |
US2014328112(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201313874725 |
申请日期 |
2013.05.01 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
Riley John R. |
| 分类号 |
G11C11/24 |
主分类号 |
G11C11/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit device, comprising:
a memory comprising at least one memory cell coupled to a supply voltage line to receive a supply voltage; and a voltage control circuit operable to reduce a magnitude of the supply voltage prior to a write cycle to the memory cell, the voltage control circuit comprising:
a first pull-down transistor coupled to the supply voltage line; anda first capacitor coupled between the first pull-down transistor and a first reference supply voltage line of the integrated circuit device. |
| 地址 |
Sunnyvale CA US |
