发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR MICRO- OR NANO-WIRE, SEMICONDUCTOR STRUCTURE COMPRISING SUCH A MICRO- OR NANO-WIRE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE |
摘要 |
A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgxNy, and forming at least one semiconducting micro- or nano-wire on the buffer layer. |
申请公布号 |
US2014327037(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201214362479 |
申请日期 |
2012.12.19 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT |
发明人 |
Dussaigne Amelie;Gilet Philippe;Martin Francois |
分类号 |
H01L33/00;H01L33/20;H01L33/12;H01L33/32;H01L31/0304;H01L31/18;H01L31/0352 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Paris FR |