发明名称 METHOD FOR MANUFACTURING A SEMICONDUCTOR MICRO- OR NANO-WIRE, SEMICONDUCTOR STRUCTURE COMPRISING SUCH A MICRO- OR NANO-WIRE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
摘要 A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgxNy, and forming at least one semiconducting micro- or nano-wire on the buffer layer.
申请公布号 US2014327037(A1) 申请公布日期 2014.11.06
申请号 US201214362479 申请日期 2012.12.19
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 发明人 Dussaigne Amelie;Gilet Philippe;Martin Francois
分类号 H01L33/00;H01L33/20;H01L33/12;H01L33/32;H01L31/0304;H01L31/18;H01L31/0352 主分类号 H01L33/00
代理机构 代理人
主权项
地址 Paris FR