发明名称 |
GLASS WITH DEPLETED LAYER AND POLYCRYSTALLINE-SILICON TFT BUILT THEREON |
摘要 |
There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors ("TFTs") on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon. |
申请公布号 |
WO2014179163(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
WO2014US35428 |
申请日期 |
2014.04.25 |
申请人 |
CORNING INCORPORATED |
发明人 |
CHUANG, TA KO;GU, YUNFENG;MANLEY, ROBERT GEORGE |
分类号 |
H01L21/324;H01L29/786 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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