SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device having stable electrical characteristics, and to provide a method of manufacturing the semiconductor device.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a first source electrode in contact with a semiconductor layer; forming a first drain electrode in contact with the semiconductor layer; forming a second source electrode in contact with the semiconductor layer, extending over an end of the first source electrode; forming a second drain electrode in contact with the semiconductor layer, extending over an end of the first drain electrode; forming a first side wall in contact with a side wall of the second source electrode and the semiconductor layer; forming a second side wall in contact with a side wall of the second drain electrode and the semiconductor layer; and forming a gate electrode through a gate insulation layer so as to overlap with the first side wall, the second side wall, and the semiconductor layer. An electric field near the source electrode or the drain electrode is relaxed and hot carrier deterioration hardly occurs by providing the first side wall and the second side wall.