发明名称 |
THROUGH SUBSTRATE VIA STRUCTURES AND METHODS OF FORMING THE SAME |
摘要 |
A structure includes a substrate, and an interconnect structure over the substrate. The structure further includes a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer. The structure further includes a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material. The conductive material layer includes a first section separated from substrate by the second portion of the dielectric layer. The conductive material layer further includes a second section over a top surface of the second portion of the dielectric layer. The conductive material layer further includes a third section over the second section, wherein the third section has a width greater than a width of the second section. |
申请公布号 |
US2014327151(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201414334100 |
申请日期 |
2014.07.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YANG Ku-Feng;WU Tsang-Jiuh;CHEN Yi-Hsiu;LIAO Ebin;LIU Yuan-Hung;CHIOU Wen-Chih |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
1. A structure comprising:
a substrate; an interconnect structure over the substrate; a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer; and a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material, wherein the conductive material layer comprises:
a first section separated from substrate by the second portion of the dielectric layer,a second section over a top surface of the second portion of the dielectric layer, anda third section over the second section, wherein the third section has a width greater than a width of the second section. |
地址 |
Hsinchu TW |