发明名称 THROUGH SUBSTRATE VIA STRUCTURES AND METHODS OF FORMING THE SAME
摘要 A structure includes a substrate, and an interconnect structure over the substrate. The structure further includes a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer. The structure further includes a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material. The conductive material layer includes a first section separated from substrate by the second portion of the dielectric layer. The conductive material layer further includes a second section over a top surface of the second portion of the dielectric layer. The conductive material layer further includes a third section over the second section, wherein the third section has a width greater than a width of the second section.
申请公布号 US2014327151(A1) 申请公布日期 2014.11.06
申请号 US201414334100 申请日期 2014.07.17
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YANG Ku-Feng;WU Tsang-Jiuh;CHEN Yi-Hsiu;LIAO Ebin;LIU Yuan-Hung;CHIOU Wen-Chih
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
代理机构 代理人
主权项 1. A structure comprising: a substrate; an interconnect structure over the substrate; a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer; and a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material, wherein the conductive material layer comprises: a first section separated from substrate by the second portion of the dielectric layer,a second section over a top surface of the second portion of the dielectric layer, anda third section over the second section, wherein the third section has a width greater than a width of the second section.
地址 Hsinchu TW