| 发明名称 |
Stress Relieving Semiconductor Layer |
| 摘要 |
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers. |
| 申请公布号 |
US2014326950(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201414266900 |
申请日期 |
2014.05.01 |
| 申请人 |
Sensor Electronic Technology, Inc. |
发明人 |
Shatalov Maxim S.;Yang Jinwei;Sun Wenhong;Jain Rakesh;Shur Michael;Gaska Remigijus |
| 分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure comprising:
a cavity containing layer, wherein the cavity containing layer is formed of a semiconductor material, has a thickness greater than two monolayers, and has a plurality of cavities, and wherein the plurality of cavities have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers. |
| 地址 |
Columbia SC US |
