COBALT REMOVAL FOR CHAMBER CLEAN OR PRE-CLEAN PROCESS

摘要

Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

主权项

1. A method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber, the method comprising:
flowing a fluorine containing cleaning gas mixture into a remote plasma source fluidly coupled with the substrate processing chamber, forming reactive species from the fluorine containing cleaning gas mixture and transporting the reactive species into the substrate processing chamber; permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state; and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.