| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing moire caused by a dummy pattern even when detection sensitivity for optical defect detection is increased, and to provide a method of manufacturing the semiconductor device.SOLUTION: The semiconductor device comprises: a first layer which is provided on a semiconductor substrate and includes a first wiring pattern 101w flattened by CMP and a plurality of first dummy patterns 101d made of a same material as that of the first wiring pattern 101w; and a second layer which is provided on a semiconductor substrate and includes a second wiring pattern 102w flattened by CMP and a plurality of second dummy patterns 102d made of a same material as that of the second wiring pattern 102w. The center axis of each of the second dummy pattern 102d is aligned with the center axis of each of the corresponding first dummy patterns 101d in a direction perpendicular to the semiconductor substrate.</p> |
