CONTINUOUS PLASMA ETCH PROCESS

摘要

A method for etching features with a continuous plasma is provided. A first plasma process is provided, comprising providing a flow of a first process gas into a process chamber, maintaining the continuous plasma, and stopping the flow of the first process gas into the process chamber. A transition process is provided, comprising providing a flow of a transition gas into the process chamber, maintaining the continuous plasma, and stopping the flow of the transition gas into the process chamber. A second plasma process is provided, comprising providing a flow of a second process gas into the process chamber, maintaining the continuous plasma, and stopping the second process gas into the process chamber.

主权项

1. A method for etching features with a continuous plasma, comprising:
providing a first plasma process, comprising:
providing a flow of a first process gas into a process chamber;maintaining the continuous plasma; andstopping the flow of the first process gas into the process chamber; providing a transition process, comprising;
providing a flow of a transition gas into the process chamber;maintaining the continuous plasma; andstopping the flow of the transition gas into the process chamber; and providing a second plasma process, comprising:
providing a flow of a second process gas into the process chamber;maintaining the continuous plasma; andstopping the second process gas into the process chamber.