发明名称 POWER SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE DEVICE AND BONDING WIRE
摘要 It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode 3) on a power semiconductor die 2 and another metal electrode (connection electrode 4) are connected by metal wire 5 using wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 μm and not greater than 2 mm and the die 3 has thereon one or more metal and/or alloy layers, each of the layer(s) being 50 Å or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.
申请公布号 US2014327018(A1) 申请公布日期 2014.11.06
申请号 US201314364555 申请日期 2013.02.22
申请人 NIPPON MICROMETAL CORPORATION ;WASEDA UNIVERSITY 发明人 Tatsumi Kohei;Yamada Takashi;Oda Daizo
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A power semiconductor device comprising: a power semiconductor die, a metal electrode on the power semiconductor die (hereinafter referred to as a die electrode); andanother metal electrode to be connected to the die electrode (hereinafter referred to as a connection electrode), wherein the die electrode and the connection electrode are connected with a metal wire by a wedge bonding connection; wherein the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 μm and not greater than 2 mm and the die electrode has thereon one or more layers (hereinafter referred to as electrode coating layer(s)), each of the layer(s) being 50 Å or more in thickness consists of any one metal or an alloy made of two or more metals selected from the group consisting of Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al (hereinafter referred to as coating layer metal), wherein the die electrode and the electrode coating layer or the electrode coating layers adjacent to each other are different in their metal composition; wherein in the case where the die electrode is an Al electrode and an outermost surface layer of the electrode coating layer(s) is made of Ag, the die electrode has thereon, under the outermost surface layer of the electrode coating layer(s), one or more electrode coating layers each of which consists of any one metal selected from the coating layer metal except Ag or any alloy consisting of two or more metals selected from the coating layer metal, wherein the die electrode and the electrode coating layer or the electrode coating layers adjacent to each other are different in their metal composition.
地址 Iruma-shi, Saitama JP