发明名称 |
Photoelectric Conversion Device and Manufacturing Method Thereof |
摘要 |
A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency. |
申请公布号 |
US2014326307(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201414331664 |
申请日期 |
2014.07.15 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Arai Yasuyuki |
分类号 |
H01L31/0224 |
主分类号 |
H01L31/0224 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Kanagawa-ken JP |