Solar Cell By-Pass Diode with Improved Metal Contacts

摘要

The present disclosure provides a system, method, and apparatus for a solar cell by-pass diode with improved metal contacts. The method involves depositing a dielectric layer (e.g., SiO2 layer) on the metal contacts, and etching off a portion of the dielectric layer after sintering the metal contacts. The dielectric layer prevents the contact metal from oxidation during sintering. The unetched portion of the dielectric layer is used as the P-N junction passivation by the by-pass diode.

主权项

1. A method for manufacturing a solar cell by-pass diode, the method comprising:
forming a first doping layer on a first side of a silicon wafer; depositing a first dielectric layer on the first doping layer and on a second side of the silicon wafer; etching an opening in the first dielectric layer on the second side of the silicon wafer; performing one of diffusion and ion implant over the opening to create a junction; removing the first dielectric layer from the first doping layer and from the second side of the silicon wafer; depositing a first metal contact on the junction, and depositing a second metal contact on the first doping layer; depositing a second dielectric layer on the first metal contact, on an exposed portion of the second side of the silicon wafer, and on the second metal contact; and etching an opening in the second dielectric layer on the first metal contact; and removing the second dielectric layer on the second metal contact.