| 摘要 |
The semiconductor layer sequence (2) has an n-conductive layer (21), a p-conductive layer (22), and an active zone (3) lying between the two layers. The active zone (3) comprises N quantum wells, where N ≥ 2. The quantum wells (33) have a first emission wavelength in a first operating point (W1) at a first current density and a second emission wavelength in a second operating point (W2) at a second current density. At least two of the first emission wavelengths are different from each other, and the second emission wavelengths at least partly differ from the first emission wavelengths. The first current density is lower than the second current density, and the current densities differ by at least a factor of 2. In the first operating point, at least one of the first emission wavelengths of a specific first quantum well is longer than another of the first emission wavelengths of another second quantum well. In the second operating point, the second emission wavelength of said first quantum well is shorter than or equal to the second emission wavelengths of the second quantum well such that a difference between said first and second emission wavelengths of said first and second quantum wells disappears in the second operating point or decreases towards the second operating point or the sign switches. |
