| 发明名称 |
RUTHENIUM PRECURSOR, PREPARATION METHOD THEREFOR AND METHOD FOR FORMING THIN FILM USING SAME |
| 摘要 |
<p>The present invention relates to a ruthenium precursor represented by chemical formula 1, and the ruthenium precursor has the advantages of having improved thermal stability and volatility, and not having to use oxygen when depositing a thin film, and thus is capable of forming a high-quality ruthenium thin film.</p> |
| 申请公布号 |
WO2014178684(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
WO2014KR03957 |
申请日期 |
2014.05.02 |
| 申请人 |
KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY |
发明人 |
PARK, BO-KEUN;CHUNG, TAEK-MO;KIM, CHANG-GYOUN;JEON, DONG-JU;JUNG, EUN-AE |
| 分类号 |
C23C16/06;C23C16/448 |
主分类号 |
C23C16/06 |
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