发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a CMOS SGT manufacturing method which is a gate last process, and forms an nMOS SGT and a pMOS SGT from one dummy pattern; and provide the consequent SGT structure.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming first and second fin-shaped silicon layers on a substrate, forming a first insulation film around the first and second fin-shaped silicon layers, and forming first and second columnar silicon layer on upper parts of the first and second fin-shaped silicon layers; a process of implanting an impurity into an upper part of the first columnar silicon layer, the upper part of the first fin-shaped silicon layer and a lower part of the first columnar silicon layer to form an n-type diffusion layer; a process of implanting an impurity into an upper part of the second columnar silicon layer, the upper part of the second fin-shaped silicon layer and a lower part of the second columnar silicon layer to form a p-type diffusion layer; a process of forming a gate insulation film and first and second polysilicon gate electrodes; and a process of forming a silicide on an upper part of the diffusion layer at the upper parts of the first and second fin-shaped silicon layers.</p> |
申请公布号 |
JP2014209667(A) |
申请公布日期 |
2014.11.06 |
申请号 |
JP20140160675 |
申请日期 |
2014.08.06 |
申请人 |
UNISANTIS ELECTRONICS SINGAPORE PTE LTD |
发明人 |
MASUOKA FUJIO;NAKAMURA HIROKI |
分类号 |
H01L21/8238;H01L21/336;H01L27/092;H01L29/41;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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