发明名称 |
METAL MATERIAL FOR ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 μm. |
申请公布号 |
US2014329107(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201214346025 |
申请日期 |
2012.09.10 |
申请人 |
Shibuya Yoshitaka;Fukamachi Kazuhiko;Kodama Atsushi |
发明人 |
Shibuya Yoshitaka;Fukamachi Kazuhiko;Kodama Atsushi |
分类号 |
H01B1/02;B32B15/01 |
主分类号 |
H01B1/02 |
代理机构 |
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代理人 |
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主权项 |
1. A metal material for electronic component, having low whisker formability and high durability, comprising:
a base material; an A layer constituting a surface layer on the base material and formed of Sn, In or an alloy thereof; and a B layer constituting a middle layer provided between the base material and the A layer and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) has the following constituents (i) or (ii): (i) a thickness of 0.002 to 0.2 μm, (ii) a deposition amount of Sn, In of 1 to 150 μg/cm2; and the middle layer (B layer) has the following constituents (iii) or (iv): (iii) a thickness of 0.001 to 0.3 μm, (iv) a deposition amount of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir of 1 to 330 μg/cm2. |
地址 |
Ibaraki JP |