发明名称 METAL MATERIAL FOR ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME
摘要 There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 μm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 μm.
申请公布号 US2014329107(A1) 申请公布日期 2014.11.06
申请号 US201214346025 申请日期 2012.09.10
申请人 Shibuya Yoshitaka;Fukamachi Kazuhiko;Kodama Atsushi 发明人 Shibuya Yoshitaka;Fukamachi Kazuhiko;Kodama Atsushi
分类号 H01B1/02;B32B15/01 主分类号 H01B1/02
代理机构 代理人
主权项 1. A metal material for electronic component, having low whisker formability and high durability, comprising: a base material; an A layer constituting a surface layer on the base material and formed of Sn, In or an alloy thereof; and a B layer constituting a middle layer provided between the base material and the A layer and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) has the following constituents (i) or (ii): (i) a thickness of 0.002 to 0.2 μm, (ii) a deposition amount of Sn, In of 1 to 150 μg/cm2; and the middle layer (B layer) has the following constituents (iii) or (iv): (iii) a thickness of 0.001 to 0.3 μm, (iv) a deposition amount of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir of 1 to 330 μg/cm2.
地址 Ibaraki JP