LOW TEMPERATURE FLOWABLE CURING FOR STRESS ACCOMMODATION

摘要

Methods of forming gapfill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on a patterned substrate. The methods include non-thermally treating the silicon-and-hydrogen-containing layer at low substrate temperature to increase the concentration of Si—Si bonds while the silicon-and-hydrogen-containing layer remains soft. The flaccid layer is able to adjust to the departure of hydrogen from the film and retain a high density without developing a stress. Film qualify is further improved by then inserting O between Si—Si bonds to expand the film in the trenches thereby converting the silicon-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer.

主权项

1. A method of forming a silicon-and-oxygen-containing layer on a substrate, the method comprising the sequential steps of:
depositing a silicon-and-hydrogen-containing layer on the substrate at a substrate deposition temperature, wherein the silicon-and-hydrogen-containing layer is flowable during deposition; performing a non-thermal treatment of the silicon-and-hydrogen-containing layer at a non-thermal treatment temperature below 150° C., wherein the non-thermal treatment and non-thermal treatment temperature are sufficient to remove hydrogen from the film but also sufficient to retain the flowability of the silicon-and-hydrogen-containing layer during the non-thermal treatment, wherein the non-thermal treatment modifies the silicon-and-hydrogen-containing layer into a silicon-containing layer; and steam annealing the silicon-containing layer at a steam annealing temperature sufficient to convert the silicon-containing layer into the silicon-and-oxygen-containing layer.