| 发明名称 |
STORAGE ELEMENT AND MEMORY |
| 摘要 |
A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer. |
| 申请公布号 |
US2014328119(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201214359488 |
申请日期 |
2012.11.19 |
| 申请人 |
Sony Corporation |
发明人 |
Higo Yutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Asayama Tetsuya;Yamane Kazutaka;Uchida Hiroyuki |
| 分类号 |
G11C11/16;H01L43/02 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A storage element comprising:
a magnetization fixed layer; and a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers, wherein magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer. |
| 地址 |
Tokyo JP |
