发明名称 SEMICONDUCTOR DEVICE PACKAGES INCLUDING THERMALLY INSULATING MATERIALS AND METHODS OF MAKING AND USING SUCH SEMICONDUCTOR PACKAGES
摘要 Semiconductor devices may include a first semiconductor die comprising a heat-generating region located at a periphery thereof. A second semiconductor die is attached to the first semiconductor die. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die. Methods of forming semiconductor devices may involve attaching a second semiconductor die to a first semiconductor die. The first semiconductor die includes a heat-generating region at a periphery thereof. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die.
申请公布号 US2014327130(A1) 申请公布日期 2014.11.06
申请号 US201414334870 申请日期 2014.07.18
申请人 MICRON TECHNOLOGY, INC. 发明人 Groothuis Steven;Li Jian;Luo Shijian
分类号 H01L23/367;H01L23/433 主分类号 H01L23/367
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first semiconductor die comprising a heat-generating region located at a periphery of the first semiconductor die; a second semiconductor die physically attached and electrically connected to the first semiconductor die, at least a portion of the heat-generating region located laterally outside a footprint of the second semiconductor device; a thermally insulating material located on a side surface of the second semiconductor die; and a thermally conductive overmold located at least partially over the first and second semiconductor dice and the thermally insulating material; wherein a thermal conductivity of the thermally insulating material is less than a thermal conductivity of the thermally conductive overmold.
地址 Boise ID US