发明名称 Method of Manufacturing a Semiconductor Device
摘要 The method includes providing a semiconductor chip having a first main face and a second main face opposite the first main face. The semiconductor chip includes an electrical device adjacent to the first main face. Material of the semiconductor chip is removed at the second main face except for a pre-defined portion so that a non-planar surface remains at the second main face.
申请公布号 US2014327071(A1) 申请公布日期 2014.11.06
申请号 US201414282946 申请日期 2014.05.20
申请人 Infineon Technologies AG 发明人 Fuergut Edward;Mahler Joachim
分类号 H01L29/78;H01L29/66;H01L23/31 主分类号 H01L29/78
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor chip having a first main face and a second main face opposite the first main face; and a projection connected to the second main face of the semiconductor chip, the projection extending in a right angle with respect to a plane of the second main face.
地址 Neubiberg DE