REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS

摘要

The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enable obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device.

主权项

1. A method for growing group III nitride crystals, comprising:
passing a solution of group III nitride and supercritical ammonia from a nutrient region at a first temperature set-point through an intermediate region comprising a plurality of flow impediments, the flow impediments defining a flow path for the solution; and growing a group III nitride crystal in a crystal growth region at a second temperature set-point, and wherein said impediments provide sufficient mixing and sufficient temperature equilibration such that a total amount of group III nitride deposited on a wall of the reactor is suppressed to be less than 20% of a total consumption of the group III nutrient.