METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE

摘要

According to one embodiment, a manufacturing method of a semiconductor memory device includes forming a stacked body in which word line material layers and insulating layers are alternately stacked on a base layer. The method includes forming first holes on the stacked body so as to be arranged in a first direction and in a second direction that intersects with the first direction. The method includes forming resistance-change films on inner walls of the first holes, forming bit lines inside the resistance-change films in the first holes, and dividing the stacked body in the first direction by forming second holes so that a portion in the stacked body adjacent to the resistance-change films in the second direction. The method includes forming inter-bit line insulating films in the second holes.

主权项

1. A manufacturing method of a semiconductor memory device, comprising:
forming a stacked body in which word line material layers and insulating layers are alternately stacked on a base layer; forming first holes on the stacked body so as to be arranged in a first direction and in a second direction that intersects with the first direction; forming resistance-change films on inner walls of the first holes; forming bit lines inside the resistance-change films in the first holes; dividing the stacked body in the first direction by forming second holes so that a portion in the stacked body adjacent to the resistance-change films in the second direction; and forming inter-bit line insulating films in the second holes.