| 摘要 |
<p>The purpose of the present invention is to provide a pattern forming method which is suitably applicable to the formation of a fine line and space pattern or a fine hole pattern, and which is suppressed in film thinning. This pattern forming method comprises: a step (1) for forming a film on a substrate using an active light sensitive or radiation sensitive resin composition which contains at least a resin having a group that is decomposed by the action of an acid and produces a polar group; a step (2) for exposing the film; and a step (3) for forming a pattern by developing the exposed film. In the step (3), either one of step A that is carried out by a developer liquid containing water and step B that is carried out by a developer liquid containing an organic solvent is performed, and after that the other one is performed. The developer liquid containing an organic solvent contains an additive which forms at least one interaction that is selected from among an ionic bond, a hydrogen bond, a chemical bond and a dipolar interaction together with a polar group.</p> |
