METHOD TO MAKE DUAL MATERIAL FINFET ON SAME SUBSTRATE

摘要

A method of fabricating a semiconductor device including proving a substrate having a germanium containing layer that is present on a dielectric layer, and etching the germanium containing layer of the substrate to provide a first region including a germanium containing fin structure and a second region including a mandrel structure. A first gate structure may be formed on the germanium containing fin structures. A III-V fin structure may then be formed on the sidewalls of the mandrel structure. The mandrel structure may be removed. A second gate structure may be formed on the III-V fin structure.

主权项

1. A method of fabricating a semiconductor device comprising:
proving a substrate having a germanium containing layer that is present on a dielectric layer; etching the germanium containing layer of the substrate to provide a first region including a germanium containing fin structure and a second region including a mandrel structure; forming a first gate structure on the germanium containing fin structure; forming a III-V fin structure on a sidewall of the mandrel structure; removing the mandrel structure; and forming a second gate structure on the III-V fin structure.