| 发明名称 |
RIDGE WAVEGUIDE SEMICONDUCTOR LASER DIODE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
Provided is a method of manufacturing a ridge waveguide type semiconductor laser diode, the method including sequentially forming, on a substrate, a lower clad layer, an active layer, a first upper clad layer, and a second upper clad layer; forming an insulating mask on the second upper clad layer; wet-etching the second upper clad layer by using the insulating mask to form channels passing through the second upper clad layer and a ridge between the channels; and performing dry-etching by using the insulating mask to form trenches that are extended from the channels and pass through the first upper clad layer. |
| 申请公布号 |
US2014328363(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201414147923 |
申请日期 |
2014.01.06 |
| 申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
KWON Oh Kee;LEE Chul-Wook;BAEK Yongsoon |
| 分类号 |
H01S5/026;H01S5/22 |
主分类号 |
H01S5/026 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a ridge waveguide type semiconductor laser diode, the method comprising:
sequentially forming, on a substrate, a lower clad layer, an active layer, a first upper clad layer, and a second upper clad layer; forming an insulating mask on the second upper clad layer; wet-etching the second upper clad layer by using the insulating mask to form channels passing through the second upper clad layer and a ridge between the channels; and performing dry-etching by using the insulating mask to form trenches that are extended from the channels and pass through the first upper clad layer. |
| 地址 |
Daejeon KR |
