发明名称 WRITE SEQUENCE PROVIDING WRITE ABORT PROTECTION
摘要 In a multi-level cell (MLC) nonvolatile memory array, data is assigned sequentially to the lower and upper page of a word line, then both lower and upper pages are programmed together before programming a subsequent word line. Word lines of multiple planes are programmed together using latches to hold data until all data is transferred. Tail-ends of data of write commands are stored separately.
申请公布号 WO2014137645(A3) 申请公布日期 2014.11.06
申请号 WO2014US18066 申请日期 2014.02.24
申请人 SANDISK TECHNOLOGIES INC. 发明人 AVILA, CHRIS NGA YEE;DUSIJA, GAUTAM ASHOK
分类号 G11C11/56;G11C16/04;G11C16/10 主分类号 G11C11/56
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