| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor device having high reliability, which reduces parasitic capacitance caused by an interlayer insulation film around electrodes to the extent possible to achieve sufficient improvement of a maximum operating frequency.SOLUTION: A semiconductor device comprises: a first electrode 7; second electrodes 4, 5; an interlayer insulation film 9 which is formed above the first electrode 7 and the second electrodes 4, 5 and composed of a porous insulating material; and connection parts 11a, 11b electrically connected to the first electrode 7 and the second electrodes 4, 5. A cavity 13 is formed between the interlayer insulation film 9 and a surface of the first electrode 7, surfaces of the second electrodes 4, 5 and a part of surfaces of the connection parts 11a, 11b. |
