LOW TEMPERATURE FLOWABLE CURING FOR STRESS ACCOMMODATION

摘要

Methods of forming gapfill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on a patterned substrate. The methods include non-thermally treating the silicon-and-hydrogen-containing layer at low substrate temperature to increase the concentration of Si-Si bonds while the silicon-and-hydrogen-containing layer remains soft. The flaccid layer is able to adjust to the departure of hydrogen from the film and retain a high density without developing a stress. Film qualify is further improved by then inserting O between Si-Si bonds to expand the film in the trenches thereby converting the silicon-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer.