发明名称 SUBSTRATE PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing device capable of preventing a decrease in a device operation rate by suppressing foreign matter contamination in a reaction tube.SOLUTION: A substrate processing device comprises: a reaction tube 203 which stores a substrate 200; a first nozzle 249a and a second nozzle 249b which supply a gas into the reaction tube 203; a cleaning gas supply system which supplies a cleaning gas; an inert gas supply system which supplies an inert gas; an exhaust system which exhausts an atmosphere in the reaction tube 203; and a control system which controls the cleaning gas supply system, the inert gas supply system, and the exhaust system. The control system repeats a first step of supplying an inert gas and a cleaning gas into the reaction tube 203 via the first nozzle 249a, supplying an inert gas into the reaction tube 203 via the second nozzle 249b, and controlling pressure in the reaction tube 203 by controlling the exhaust system, and a second step of stopping inert gas supply via the second nozzle 249b.
申请公布号 JP2014209633(A) 申请公布日期 2014.11.06
申请号 JP20140111146 申请日期 2014.05.29
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 OKUDA KAZUYUKI;MIZUNO KANEKAZU
分类号 H01L21/31;C23C16/44;H01L21/205;H01L21/3065 主分类号 H01L21/31
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